High Speed 1.1-µm-Range InGaAs-Based VCSELs. - Naofumi Suzuki; Takayoshi Anan; Hiroshi Hatakeyama; Kimiyoshi Fukatsu; Kenichiro Yashiki; Keiichi Tokutome; Takeshi Akagawa; Masayoshi Tsuji (IEICE Trans. Electron., 2009)

1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times. - Takashi Ohsawa; Hiroki Koike; Sadahiko Miura; Hiroaki Honjo; Keiichi Tokutome; Shoji Ikeda; Takahiro Hanyu; Hideo Ohno; Tetsuo Endoh (VLSIC, 2012)

A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing. - Ryusuke Nebashi; Noboru Sakimura; Hiroaki Honjo; Ayuka Morioka; Yukihide Tsuji; Kunihiko Ishihara; Keiichi Tokutome; Sadahiko Miura; Shunsuke Fukami; Keizo Kinoshita; Takahiro Hanyu; Tetsuo Endoh; et al. (ISCAS, 2014)