A 65nm Embedded SRAM with Wafer-Level Burn-In Mode, Leak-Bit Redundancy and E-Trim Fuse for Known Good Die. - Shigeki Ohbayashi; Makoto Yabuuchi; Kazushi Kono; Yuji Oda; Susumu Imaoka; Keiichi Usui; Toshiaki Yonezu; Takeshi Iwamoto; Koji Nii; Yasumasa Tsukamoto; Masashi Arakawa; Takahiro Uchida; et al. (ISSCC, 2007)

A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die. - Shigeki Ohbayashi; Makoto Yabuuchi; Kazushi Kono; Yuji Oda; Susumu Imaoka; Keiichi Usui; Toshiaki Yonezu; Takeshi Iwamoto; Koji Nii; Yasumasa Tsukamoto; Masashi Arakawa; Takahiro Uchida; et al. (IEEE J. Solid State Circuits, 2008)

Synchronous Ultra-High-Density 2RW Dual-Port 8T-SRAM With Circumvention of Simultaneous Common-Row-Access. - Koji Nii; Yasumasa Tsukamoto; Makoto Yabuuchi; Yasuhiro Masuda; Susumu Imaoka; Keiichi Usui; Shigeki Ohbayashi; Hiroshi Makino; Hirofumi Shinohara (IEEE J. Solid State Circuits, 2009)