Si nanowire FET and its modeling. - Hiroshi Iwai; Kenji Natori; Kenji Shiraishi; Jun-ichi Iwata; Atsushi Oshiyama; Keisaku Yamada; Kenji Ohmori; Kuniyuki Kakushima; Parhat Ahmet (Sci. China Inf. Sci., 2011)

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. - Soshi Sato; Kuniyuki Kakushima; Parhat Ahmet; Kenji Ohmori; Kenji Natori; Keisaku Yamada; Hiroshi Iwai (Microelectron. Reliab., 2011)

Effect of substrate bias on frequency dependence of MOSFET noise intensity. - Kenji Ohmori; Ranga Hettiarachchi; Keisaku Yamada (ESSDERC, 2012)

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. - Yan Wu; Hiroyuki Hasegawa; Kuniyuki Kakushima; Kenji Ohmori; Takanobu Watanabe; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Yoshinori Kataoka; Kenji Natori; Keisaku Yamada; et al. (Microelectron. Reliab., 2014)