Recent Advances in Ga2O3 MOSFET Technologies. - Masataka Higashiwaki; Man Hoi Wong; Takafumi Kamimura; Yoshiaki Nakata; Chia-Hung Lin; Ravikiran Lingaparthi; Akinori Takeyama; Takahiro Makino; Takeshi Ohshima; Naoki Hatta; Kuniaki Yagi; Ken Goto; et al. (DRC, 2018)

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. - James Spencer Lundh; Hannah N. Masten; Kohei Sasaki; Alan G. Jacobs; Zhe Cheng; Joseph Spencer; Lei Chen; James C. Gallagher; Andrew D. Koehler; Keita Konishi; Samuel Graham; Akito Kuramata; et al. (DRC, 2022)