SEU Sensitivity of PMOS and NMOS Transistors in a 65 nm Bulk Process by α-Particle Irradiation. - Keita Yoshida; Ryuichi Nakajima; Shotaro Sugitani; Takafumi Ito; Jun Furuta; Kazutoshi Kobayashi (ICICDT, 2023)

Radiation Hardened Flip-Flops with low Area, Delay and Power Overheads in a 65 nm bulk process. - Shotaro Sugitani; Ryuichi Nakajima; Keita Yoshida; Jun Furuta; Kazutoshi Kobayashi (IRPS, 2023)

Comparative Analysis of TID Effects in a 65 nm FD-SOI Process Under Gamma-Ray and Alpha-Ray Irradiation. - Hikaru Nakamoto; Taiki Ozawa; Ryuichi Nakajima; Haruto Sugisaki; Keita Yoshida; Jun Furuta; Kazutoshi Kobayashi (IOLTS, 2025)

Radiation-Hardened Flip-Flops in a 65 nm Bulk Process for Terrestrial Applications Coping with Radiation Hardness and Performance Overheads. - Shotaro Sugitani; Ryuichi Nakajima; Keita Yoshida; Jun Furuta; Kazutoshi Kobayashi (IEICE Trans. Electron., 2025)