7.6 A 90nm embedded 1T-MONOS flash macro for automotive applications with 0.07mJ/8kB rewrite energy and endurance over 100M cycles under Tj of 175°C. - Hidenori Mitani; Ken Matsubara; Hiroshi Yoshida; Takashi Hashimoto; Hideaki Yamakoshi; Shinichiro Abe; Takashi Kono; Yasuhiko Taito; Takashi Ito; Takashi Krafuji; Kenji Noguchi; Hideto Hidaka; et al. (ISSCC, 2016)

SONOS 1Tr eFlash Memory. - Hidenori Mitani; Ken Matsubara (Embedded Flash Memory for Embedded Systems, 2018)

Stretchable Helical Wire Made with Liquid Metal. - Hiroki Ota; Ken Matsubara (NEMS, 2019)

A 65nm Silicon-on-Thin-Box (SOTB) Embedded 2T-MONOS Flash Achieving 0.22 pJ/bit Read Energy with 64 MHz Access for IoT Applications. - Ken Matsubara; Tsutomu Nagasawa; Yoshinobu Kaneda; Hidenori Mitani; Hiroshi Sato; Takashi Iwase; Yasunobu Aoki; Keiichi Maekawa; Hideaki Yamakoshi; Takashi Ito; Hiroyuki Kondo; Takashi Kono (VLSI Circuits, 2019)

Hydrogel Actuator with a Built-In Stimulator Using Liquid Metal for Local Control. - Ken Matsubara; Daiki Tachibana; Ryosuke Matsuda; Hiroaki Onoe; Ohmi Fuchiwaki; Hiroki Ota (Adv. Intell. Syst., 2020)

A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier. - Masaya Nakano; Yoshinobu Kaneda; Koichi Takeda; Takahiro Shimoi; Yasunobu Aoki; Satoru Nakanishi; Yosuke Tashiro; Yasuhiko Taito; Ken Matsubara; Munekatsu Nakagawa; Tomoya Ogawa; Takashi Kurafuji; et al. (A-SSCC, 2021)

A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C. - Takahiro Shimoi; Ken Matsubara; Tomoya Saito; Tomoya Ogawa; Yasuhiko Taito; Yoshinobu Kaneda; Masayuki Izuna; Koichi Takeda; Hidenori Mitani; Takashi Ito; Takashi Kono (VLSI Technology and Circuits, 2022)

15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs. - Tomoya Ogawa; Ken Matsubara; Yasuhiko Taito; Tomoya Saito; Masayuki Izuna; Koichi Takeda; Yoshinobu Kaneda; Takahiro Shimoi; Hidenori Mitani; Takashi Ito; Takashi Kono (ISSCC, 2024)

A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C. - Takahiro Shimoi; Ken Matsubara; Tomoya Saito; Tomoya Ogawa; Yasuhiko Taito; Yoshinobu Kaneda; Masayuki Izuna; Koichi Takeda; Hidenori Mitani; Takashi Ito; Takashi Kono (IEEE J. Solid State Circuits, 2024)