Pixel structure with 10 nsec fully charge transfer time for the 20m frame per second burst CMOS image sensor. - Ken Miyauchi; Tohru Takeda; K. Hanzawa; Yasuhisa Tochigi; S. Sakai; Rihito Kuroda; H. Tominaga; R. Hirose; K. Takubo; Y. Kondo; Shigetoshi Sugawa (IMSE, 2014)

Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second. - Fan Shao; Daiki Kimoto; Kiichi Furukawa; Hidetake Sugo; Tohru Takeda; Ken Miyauchi; Yasuhisa Tochigi; Rihito Kuroda; Shigetoshi Sugawa (IMSE, 2014)

A 120-ke- Full-Well Capacity 160-µV/e- Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor. - Isao Takayanagi; Ken Miyauchi; Shunsuke Okura; Kazuya Mori; Junichi Nakamura; Shigetoshi Sugawa (Sensors, 2019)

A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. - Ken Miyauchi; Kazuya Mori; Toshinori Otaka; Toshiyuki Isozaki; Naoto Yasuda; Alex Tsai; Yusuke Sawai; Hideki Owada; Isao Takayanagi; Junichi Nakamura (Sensors, 2020)

A 3.96μm, 124dB Dynamic Range, 6.2mW Stacked Digital Pixel Sensor with Monochrome and Near-Infrared Dual-Channel Global Shutter Capture. - Song Chen; Chiao Liu; Lyle Bainbridge; Qing Chao; Ramakrishna Chilukuri; Wei Gao; Andrew P. Hammond; Tsung-Hsun Tsai; Ken Miyauchi; Isao Takayanagi; Masato Nagamatsu; Hirofumi Abe; et al. (VLSI Technology and Circuits, 2023)

An Area-Efficient up/down Double-Sampling Circuit for a LOFIC CMOS Image Sensor. - Ai Otani; Hiroaki Ogawa; Ken Miyauchi; Sangman Han; Hideki Owada; Isao Takayanagi; Shunsuke Okura (Sensors, 2023)

Analysis of Light Intensity and Charge Holding Time Dependence of Pinned Photodiode Full Well Capacity. - Ken Miyauchi; Toshiyuki Isozaki; Rimon Ikeno; Junichi Nakamura (Sensors, 2023)

An Area-Efficient Readout Circuit for a High-SNR Triple-Gain LOFIC CMOS Image Sensor. - Ai Otani; Hiroaki Ogawa; Ken Miyauchi; Yuki Morikawa; Hideki Owada; Isao Takayanagi; Shunsuke Okura (ISCAS, 2025)

A 3.96-μm, 124-dB Dynamic-Range, Digital-Pixel Sensor With Triple- and Single-Quantization Operations for Monochrome and Near-Infrared Dual-Channel Global Shutter Operation. - Ken Miyauchi; Masayuki Uno; Toshiyuki Isozaki; Hideyuki Fukuhara; Kazuya Mori; Hirofumi Abe; Masato Nagamatsu; Rimon Ikeno; Isao Takayanagi; Hsin-Li Chen; Chih-Hao Lin; Wen-Chien Fu; et al. (IEEE J. Solid State Circuits, 2025)