A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput. - Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; et al. (ISSCC, 2006)

A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. - Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; et al. (IEEE J. Solid State Circuits, 2007)

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jong Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (ISSCC, 2008)

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jongmin Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (IEEE J. Solid State Circuits, 2009)

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. - Yan Li; Seungpil Lee; Ken Oowada; Hao Nguyen; Qui Nguyen; Nima Mokhlesi; Cynthia Hsu; Jason Li 001; Venky Ramachandra; Teruhiko Kamei; Masaaki Higashitani; Tuan Pham; et al. (ISSCC, 2012)