STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. - Doyoung Jang; Marie Garcia Bardon; Dmitry Yakimets; Kenichi Miyaguchi; An De Keersgieter; Thomas Chiarella; Romain Ritzenthaler; Morin Dehan; Abdelkarim Mercha (ESSDERC, 2013)

Design Technology co-optimization for N10. - Julien Ryckaert; Praveen Raghavan; Rogier Baert; Marie Garcia Bardon; Mircea Dusa; Arindam Mallik; Sushil Sakhare; Boris Vandewalle; Piet Wambacq; Bharani Chava; Kris Croes; Morin Dehan; et al. (CICC, 2014)

Modeling FinFET metal gate stack resistance for 14nm node and beyond. - Kenichi Miyaguchi; Bertrand Parvais; Lars-Åke Ragnarsson; Piet Wambacq; Praveen Raghavan; Abdelkarim Mercha; Anda Mocuta; Diederik Verkest; Aaron Thean (ICICDT, 2015)

Impact of fin shape variability on device performance towards 10nm node. - Kazuyuki Tomida; Keizo Hiraga; Morin Dehan; Geert Hellings; Doyoung Jang; Kenichi Miyaguchi; Thomas Chiarella; Minsoo Kim; Anda Mocuta; Naoto Horiguchi; Abdelkarim Mercha; Diederik Verkest; et al. (ICICDT, 2015)

Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. - Halil Kükner; Pieter Weckx; Sébastien Morrison; Jacopo Franco; Maria Toledano-Luque; Moonju Cho; Praveen Raghavan; Ben Kaczer; Doyoung Jang; Kenichi Miyaguchi; Marie Garcia Bardon; Francky Catthoor; et al. (Microprocess. Microsystems, 2015)

On the ballistic ratio in 14nm-Node FinFETs. - Fabian M. Bufler; Kenichi Miyaguchi; Thomas Chiarella; N. Horiguchi; Anda Mocuta (ESSDERC, 2017)

Device Scaling roadmap and its implications for Logic and Analog platform. - Alessio Spessot; Bertrand Parvais; Amita Rawat; Kenichi Miyaguchi; Pieter Weckx; Doyoung Jang; Julien Ryckaert (BCICTS, 2020)

110GHz Through-Silicon Via's Integrated in Silicon Photonics Interposers for Next-Generation Optical Modules. - Kenichi Miyaguchi; Yoojin Ban; Nicolas Pantano; Xiao Sun; Philippe Absil; Lieve Bogaerts; Peter Verheyen; Dimitrios Velenis; Marianna Pantouvaki; Joris Van Campenhout (ECOC, 2021)

Backside PDN and 2.5D MIMCAP to Double Boost 2D and 3D ICs IR-Drop beyond 2nm Node. - Rongmei Chen; Giuliano Sisto; Michele Stucchi; Anne Jourdain; Kenichi Miyaguchi; Pieter Schuddinck; P. Woeltgens; H. Lin; Naveen Kakarla; Anabela Veloso; Dragomir Milojevic; Odysseas Zografos; et al. (VLSI Technology and Circuits, 2022)