A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. - Hisao Shigematsu; Masaru Sato 001; Toshihide Suzuki; Tsuyoshi Takahashi; Kenji Imanishi; Naoki Hara; Hiroaki Ohnishi; Yuu Watanaba (IEEE J. Solid State Circuits, 2001)

Commercialization and reliability of 600 V GaN power switches. - Toshihide Kikkawa; Tsutomu Hosoda; Ken Shono; Kenji Imanishi; Yoshimori Asai; YiFeng Wu; Likun Shen; Kurt Smith; Dixie Dunn; Saurabh Chowdhury; Peter Smith; John Gritters; et al. (IRPS, 2015)