A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications. - Atsushi Nozoe; Hiroaki Kotani; Tetsuya Tsujikawa; Keiichi Yoshida; Kazunori Furusawa; Masataka Kato; Toshiaki Nishimoto; Hitoshi Kume; Hideaki Kurata; Naoki Miyamoto; Shoji Kubono; Michitaro Kanamitsu; et al. (IEEE J. Solid State Circuits, 1999)

A 126.6-mm2 AND-type 512-Mb flash memory with 1.8-V power supply. - Tatsuya Ishii; Kazuyoshi Oshima; Hiroshi Sato; Satoshi Noda; Jiro Kishimoto; Hiroaki Kotani; Atsushi Nozoe; Kazunori Furusawa; Takayuki Yoshitake; Masataka Kato; Masahito Takahashi; Akihiko Sato; et al. (IEEE J. Solid State Circuits, 2001)