Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films. - Tetsuo Endoh; Kazuyuki Hirose; Kenji Shiraishi (IEICE Trans. Electron., 2007)

Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot. - Masakazu Muraguchi; Yukihiro Takada; Shintaro Nomura; Tetsuo Endoh; Kenji Shiraishi (IEICE Trans. Electron., 2010)

A massively-parallel electronic-structure calculations based on real-space density functional theory. - Jun-ichi Iwata; Daisuke Takahashi; Atsushi Oshiyama; Taisuke Boku; Kenji Shiraishi; Susumu Okada; Kazuhiro Yabana (J. Comput. Phys., 2010)

Si nanowire FET and its modeling. - Hiroshi Iwai; Kenji Natori; Kenji Shiraishi; Jun-ichi Iwata; Atsushi Oshiyama; Keisaku Yamada; Kenji Ohmori; Kuniyuki Kakushima; Parhat Ahmet (Sci. China Inf. Sci., 2011)

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor. - Masakazu Muraguchi; Yoko Sakurai; Yukihiro Takada; Shintaro Nomura; Kenji Shiraishi; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki; Yasuteru Shigeta; Tetsuo Endoh (IEICE Trans. Electron., 2011)

An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory. - Akira Otake; Keita Yamaguchi; Katsumasa Kamiya; Yasuteru Shigeta; Kenji Shiraishi (IEICE Trans. Electron., 2011)

Examination of short calibration problem of Transmission Line Pulse. - Teruo Suzuki; Kenji Shiraishi (IEICE Electron. Express, 2013)

Ab initio modeling of resistive switching mechanism in binary metal oxides. - Blanka Magyari-Köpe; Liang Zhao; Yoshio Nishi; Katsumasa Kamiya; Moon Young Yang; Kenji Shiraishi (ISCAS, 2014)

Theoretical and Experimental Approaches to Select Resistive Switching Material. - Takeki Ninomiya; Zhiqiang Wei 005; Shinichi Yoneda; Kenji Shiraishi (IEICE Trans. Electron., 2015)

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories. - Hiroki Shirakawa; Keita Yamaguchi; Masaaki Araidai; Katsumasa Kamiya; Kenji Shiraishi (IEICE Trans. Electron., 2017)

Market based embedded Real Time Operation for Distributed Resources and Flexibility. - Bertrand Travacca; Greg Rybka; Kenji Shiraishi (CoRR, 2018)

Atomistic study of SiN based ReRAM with high program/erase cycle endurance. - Keita Yamaguchi; Hiroki Shirakawa; Kenji Shiraishi (IEICE Electron. Express, 2018)