Integrated RF components in a SiGe bipolar technology. - Joachim N. Burghartz; Mehmet Soyuer; Keith A. Jenkins; Michael Kies; Margaret Dolan; Kenneth J. Stein; John Malinowski; David L. Harame (IEEE J. Solid State Circuits, 1997)

Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. - Seshadri Subbanna; Lawrence Larson; Greg G. Freeman; David Ahlgren; Kenneth J. Stein; Carl E. Dickey; James Mecke; A. Rincon; P. Bacon; Robert A. Groves; Mehmet Soyuer; David L. Harame; et al. (CICC, 2001)

Foundation of rf CMOS and SiGe BiCMOS technologies. - James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg G. Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Youssef Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St. Onge; et al. (IBM J. Res. Dev., 2003)

Product applications and technology directions with SiGe BiCMOS. - Alvin J. Joseph; James S. Dunn; Greg G. Freeman; David L. Harame; Douglas Coolbaugh; Robert A. Groves; Kenneth J. Stein; Rich Volant; Seshadri Subbanna; V. S. Marangos; Stephen St. Onge; Ebenezer Eshun; et al. (IEEE J. Solid State Circuits, 2003)

SiGe HBTs with ${f_{T}/f_{ max} , sim , 375/510GHz}$ Integrated in 45nm PDSOI CMOS. - John J. Pekarik; Vibhor Jain; Crystal Kenney; Judson Holt; Shweta Khokale; Sudesh Saroop; Jeffrey B. Johnson; Kenneth J. Stein; Viorel Ontalus; Christopher Durcan; Mona Nafari; Tayel Nesheiwat; et al. (BCICTS, 2021)