High-speed gate drive circuit for SiC MOSFET by GaN HEMT. - Kohei Nagaoka; Kentaro Chikamatsu; Atsushi Yamaguchi; Ken Nakahara; Takashi Hikihara (IEICE Electron. Express, 2015)

Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs. - Hitoshi Aoki; Hiroyuki Sakairi; Naotaka Kuroda; Kentaro Chikamatsu; Ken Nakahara (ICIT, 2019)