Design of a flash-based reference voltage generator for drain bias circuit. - Rezaul Haque; Kerry Tedrow; Balaji Srinivasan (IET Circuits Devices Syst., 2007)

19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology. - Rich Fackenthal; Makoto Kitagawa; Wataru Otsuka; Kirk Prall; Duane Mills; Keiichi Tsutsui; Johnny Javanifard; Kerry Tedrow; Tomohito Tsushima; Yoshiyuki Shibahara; Glen Hush (ISSCC, 2014)