Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. - David Lehninger; Hannes Mähne; Tarek Ali; Raik Hoffmann; Ricardo Olivo; Maximilian Lederer; Konstantin Mertens; Thomas Kämpfe; Kati Biedermann; Matthias Landwehr; Andreas Heinig; Defu Wang; et al. (IMW, 2022)

Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. - Konrad Seidel; David Lehninger; Raik Hoffmann; Tarek Ali; Maximilian Lederer; Ricardo Revello; Konstantin Mertens; Kati Biedermann; Yukai Shen; Defu Wang; Matthias Landwehr; Andreas Heinig; et al. (VLSI Technology and Circuits, 2022)

Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. - Ayse Sünbül; David Lehninger; Raik Hoffmann; Hannes Mähne; Kerstin Bernert; Steffen Thiem; Thomas Kämpfe; Konrad Siedel; Maximilian Lederer; Lukas M. Eng (IRPS, 2024)

Optimized Polarization and Reduced Imprint: Integrating Ferroelectric Aluminum Co-Doped (Hf, Zr)O2 Films and Superlattices into the BEoL for FeMFET and FRAM Application. - David Lehninger; Ayse Sünbül; Kerstin Bernert; Hannes Mähne; Shouzhuo Yang; Thomas Kämpfe; Justine Barbot; Steffen Thiem; Konrad Seidel; Maximilian Lederer (NVMTS, 2024)

Al-Doped HZO: A BEoL compatible Ferroelectric Material for Automotive-Grade Memory. - David Lehninger; Ayse Sünbül; Hannes Mähne; Thomas Kämpfe; Alison Viegas; Justine Barbot; Kerstin Bernert; Steffen Thiem; Konrad Seidel; Maximilian Lederer (IMW, 2025)