An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches. - Leland Chang; Robert K. Montoye; Yutaka Nakamura; Kevin Batson; Richard J. Eickemeyer; Robert H. Dennard; Wilfried Haensch; Damir Jamsek (IEEE J. Solid State Circuits, 2008)

A 64Mb SRAM in 32nm High-k metal-gate SOI technology with 0.7V operation enabled by stability, write-ability and read-ability enhancements. - Harold Pilo; Igor Arsovski; Kevin Batson; Geordie Braceras; John A. Gabric; Robert M. Houle; Steve Lamphier; Frank Pavlik; Adnan Seferagic; Liang-Yu Chen; Shang-Bin Ko; Carl Radens (ISSCC, 2011)

A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and Read-Ability Enhancements. - Harold Pilo; Igor Arsovski; Kevin Batson; Geordie Braceras; John A. Gabric; Robert M. Houle; Steve Lamphier; Carl Radens; Adnan Seferagic (IEEE J. Solid State Circuits, 2012)

14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming. - Eric Hunt-Schroeder; Darren Anand; John A. Fifield; Mark Jacunski; Michael Roberge; Dale E. Pontius; Kevin Batson; Toshiaki Kirihata (VLSI Circuits, 2018)