Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium-Arsenide, Indium-Phosphide, Indium-Arsenide, and Gallium-Antimonide (Semiconductors, Monte Carlo, Impact Ionization) - Kevin F. Brennan (1984)

Quantum interference effects in semiconductors: a bibliography. - Thomas K. Gaylord; Elias N. Glytsis; Gregory N. Henderson; Kevin P. Martin; David B. Walker; Daniel W. Wilson; Kevin F. Brennan (Proc. IEEE, 1991)

A smoothed boundary condition for reducing nonphysical field effects. - Arlynn W. Smith; Joseph W. Parks Jr.; Joe N. Haralson III; Kevin F. Brennan (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1997)

Boundary Condition for the Modeling of Open-circuited Devices in Non-equilibrium. - Joseph W. Parks Jr.; Kevin F. Brennan (VLSI Design, 1998)

Numerical Examination of Photon Recycling as an Explanation of Observed Carrier Lifetime in Direct Bandgap Materials. - Joseph W. Parks Jr.; Kevin F. Brennan; Arlynn W. Smith (VLSI Design, 1998)

Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes. - Joseph W. Parks Jr.; Kevin F. Brennan; Larry E. Tarof (VLSI Design, 1998)

Comparison of Non-Parabolic Hydrodynamic Models Based On Different Band Structure Models. - Arlynn W. Smith; Kevin F. Brennan (VLSI Design, 1998)

Monte Carlo Modeling of Wurtzite and 4H Phase Semiconducting Materials. - Kevin F. Brennan; Enrico Bellotti; Maziar Farahmand; Hans-Erik Nilsson; P. Paul Ruden; Yumin Zhang (VLSI Design, 2001)

Simplex Algorithm for Band Structure Calculation of Noncubic Symmetry Semiconductors: Application to III-nitride Binaries and Alloys. - Enrico Ghillino; Carlo Garetto; Michele Goano; Giovanni Ghione; Enrico Bellotti; Kevin F. Brennan (VLSI Design, 2001)