A Literal Gate Using Resonant-Tunneling Devices. - Takao Waho; Kevin J. Chen; Masafumi Yamamoto (ISMVL, 1996)

Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output. - Takao Waho; Kevin J. Chen; Masafumi Yamamoto (IEEE J. Solid State Circuits, 1998)

Silicon-on-organic integration of a 2.4GHz VCO using high Q copper inductors and solder-bumped flip chip technology. - Xiao Huo; Guo-Wei Xiao; Kevin J. Chen; Philip C. H. Chan (CICC, 2003)

Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices. - Kevin J. Chen; Guofu Niu (IEEE J. Solid State Circuits, 2003)

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage. - Yong Cai; Yugang Zhou; Kei May Lau; Kevin J. Chen (IEICE Trans. Electron., 2006)

Residual stress characterization of GaN microstructures using bent-beam strain sensors. - Jianan Lv; Zhenchuan Yang; Guizhen Yan; Yong Cai; Baoshun Zhang; Kevin J. Chen (NEMS, 2010)

Characterizing power delivery systems with on/off-chip voltage regulators for many-core processors. - Xuan Wang 001; Jiang Xu 001; Zhe Wang 003; Kevin J. Chen; Xiaowen Wu; Zhehui Wang (DATE, 2014)

An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators. - Xuan Wang 001; Jiang Xu 001; Zhe Wang 003; Kevin J. Chen; Xiaowen Wu; Zhehui Wang; Peng Yang 003; Luan H. K. Duong (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2015)

High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer. - Mengyuan Hua; Kevin J. Chen (DSP, 2018)

Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET. - Mengyuan Hua; Song Yang; Jin Wei; Zheyang Zheng; Jiabei He; Kevin J. Chen (ASICON, 2019)

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices. - Yuru Wang; Gang Lyu; Jin Wei; Zheyang Zheng; Jiabei He; Jiacheng Lei; Kevin J. Chen (IEEE Trans. Ind. Electron., 2020)

E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability. - Mengyuan Hua; Junting Chen; Chengcai Wang; Lingling Li; Ling Liu; Zheyang Zheng; Kevin J. Chen (ASICON, 2021)

Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests. - Jiahui Sun; Jin Wei; Zheyang Zheng; Kevin J. Chen (IEEE Trans. Ind. Electron., 2021)

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device. - Gang Lyu; Jiahui Sun; Yuru Wang; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs. - Jiahui Sun; Kailun Zhong; Zheyang Zheng; Gang Lyu; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs. - Han Xu; Gaofei Tang; Jin Wei; Zheyang Zheng; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs. - Kailun Zhong; Jin Wei; Jiabei He; Sirui Feng; Yuru Wang; Song Yang; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications. - Kailun Zhong; Yuru Wang; Gang Lyu; Jin Wei; Jiahui Sun; Kevin J. Chen (IEEE Trans. Ind. Electron., 2022)

Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs. - Jiahui Sun; Zheyang Zheng; Li Zhang; Kevin J. Chen (IEEE Trans. Ind. Electron., 2024)