AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress. - E. A. Douglas; C. Y. Chang; David J. Cheney; B. P. Gila; Chi-Fai Lo; Liu Lu; M. R. Holzworth; Patrick G. Whiting; Kevin S. Jones; Glen David Via; Jinhyung Kim; Soohwan Jang; et al. (Microelectron. Reliab., 2011)

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors. - E. A. Douglas; C. Y. Chang; B. P. Gila; M. R. Holzworth; Kevin S. Jones; Lu Liu 011; Jinhyung Kim; Soohwan Jang; Glen David Via; Fan Ren; Stephen J. Pearton (Microelectron. Reliab., 2012)

Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. - Patrick G. Whiting; Nicholas G. Rudawski; M. R. Holzworth; Stephen J. Pearton; Kevin S. Jones; Lu Liu 011; T. S. Kang; Fan Ren (Microelectron. Reliab., 2012)

Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. - Patrick G. Whiting; M. R. Holzworth; A. G. Lind; Stephen J. Pearton; Kevin S. Jones; Lu Liu 011; T. S. Kang; Fan Ren; Y. Xin (Microelectron. Reliab., 2017)

Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. - Patrick G. Whiting; Nicholas G. Rudawski; M. R. Holzworth; Stephen J. Pearton; Kevin S. Jones; Lu Liu 011; T. S. Kang; Fan Ren (Microelectron. Reliab., 2017)