A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications. - Kexin Li 004; Shaloo Rakheja (DRC, 2018)

Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer. - Kexin Li 004; Takashi Matsuda; Eiji Yagyu; Koon Hoo Teo; Shaloo Rakheja (DRC, 2022)

A Prony-Based Curve-Fitting Method for Characterization of RF Pulses From Optoelectronic Devices. - Saptarshi Mukherjee; Karen Dowling; Yicong Dong; Kexin Li 004; Adam Conway; Shaloo Rakheja; Lars F. Voss (IEEE Signal Process. Lett., 2022)

Wideband Switched-Capacitor and Switched-Transmission-line Circulators in 40nm GaN Technology: Design and Device Modeling. - Hari Vemuri; Armagan Dascurcu; Kexin Li 004; Harish Krishnaswamy (BCICTS, 2023)

Characterization and All-Region Virtual-Source Modeling of 40 nm GaN HEMT Technology for High Frequency IC Design. - Kexin Li 004; Armagan Dascurcu; Hari Vemuri; Harish Krishnaswamy (VTS, 2025)