Simplified quantitative stress-induced leakage current (SILC) model for MOS devices. - M. Ossaimee; Khaled Kirah; W. Fikry; A. Girgis; O. A. Omar (Microelectron. Reliab., 2006)

Modelling Various Solar Cells Materials Using Lorentzian-Drude Coefficients. - Sameh Osama Abdellatif; Khaled Kirah; Rami Ghannam; Ahmed S. G. Khalil; Wagdy Anis (Int. J. Recent Contributions Eng. Sci. IT, 2016)