Research on the MPPT Simulation of Mini Photovoltaic System for the Robotic Vacuum Cleaner Battery Charging. - Seong-Min Heo; Ki-Ryong Kim; Hee-Je Kim (ICIRA (1), 2013)

Bunker Oil C Heating Using Induction Heating. - Dong-Hyun Kim; Ki-Ryong Kim; Hee-Je Kim (ICIRA (1), 2013)

Magnetic Resonance Wireless Power Transmission Using a LLC Resonant Circuit for a Locomotion Robot's Battery Charging. - Ki-Ryong Kim; Dong-Hyun Kim; Hee-Je Kim (ICIRA (1), 2013)

Thermal and solar energy harvesting boost converter with time-multiplexing MPPT algorithm. - Dong-Hoon Jung; Ki-Ryong Kim; Seong-Ook Jung (IEICE Electron. Express, 2016)

Transient Cell Supply Voltage Collapse Write Assist Using Charge Redistribution. - Ki-Ryong Kim; Hanwool Jeong; Juhyun Park; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2016)

Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. - Kyoman Kang; Hanwool Jeong; Younghwi Yang; Juhyun Park; Ki-Ryong Kim; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

Triplet-based Spike Timing Dependent Plasticity Circuit Design for three-terminal Spintronic Synapse. - Beomsang Yoo; Ki-Ryong Kim; Seong-Ook Jung (ICECS, 2018)

0.293-mm2 Fast Transient Response Hysteretic Quasi-V2 DC-DC Converter With Area-Efficient Time-Domain-Based Controller in 0.35-µm CMOS. - Dong-Hoon Jung; Ki-Ryong Kim; Sunghwan Jo; Seong-Ook Jung (IEEE J. Solid State Circuits, 2018)

Area- and Energy-Efficient STDP Learning Algorithm for Spiking Neural Network SoC. - Giseok Kim; Ki-Ryong Kim; Sara Choi; Hyo Jung Jang; Seong-Ook Jung (IEEE Access, 2020)

SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased with Technology Scaling. - Keonhee Cho; Heekyung Choi; In Jun Jung; Ji Sang Oh; Tae Woo Oh; Ki-Ryong Kim; Giseok Kim; Taemin Choi; Changsoo Sim; Taejoong Song; Seong-Ook Jung (VLSI Circuits, 2021)

Bitline Charge Sharing Suppressed Bitline and Cell Supply Collapse Assists for Energy-Efficient 6T SRAM. - Ki-Ryong Kim; Tae Woo Oh; Seong-Ook Jung (IEEE Access, 2021)

A 6.9-μm2 3.26-ns 31.25-fj Robust Level Shifter With Wide Voltage and Frequency Ranges. - Ki-Ryong Kim; Ji Young Kim; Byoung-Mo Moon; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2021)

A 0.166 pJ/b/pF, 3.5-5 Gb/s TSV I/O Interface With VOH Drift Control. - Ji-Young Kim; Jongsoo Lee; Ki-Ryong Kim; Byoung-Mo Moon; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2021)

A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications. - Keonhee Cho; Giseok Kim; Ji Sang Oh; Ki-Ryong Kim; Changsu Sim; Younmee Bae; Mijung Kim; Sangyeop Baeck; Taejoong Song; Seong-Ook Jung (VLSI Technology and Circuits, 2022)

A Low Power TSV I/O with Data Rate up to 10 Gb/s for Next Generation HBM. - Ji-Young Kim; Taeryeong Kim; Jeonghyeok You; Ki-Ryong Kim; Byoung-Mo Moon; Kyomin Sohn; Seong-Ook Jung (VLSI Technology and Circuits, 2022)

SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling. - Keonhee Cho; Heekyung Choi; In Jun Jung; Ji Sang Oh; Tae Woo Oh; Ki-Ryong Kim; Giseok Kim; Taemin Choi; Changsu Sim; Taejoong Song; Seong-Ook Jung (IEEE J. Solid State Circuits, 2022)

A 5 Gb/s Time-Interleaved Voltage-Mode Duobinary Encoding Scheme for 3-D-Stacked IC. - Ji-Young Kim; Jongsoo Lee; Ki-Ryong Kim; Sunghwan Jo; Byoung-Mo Moon; Kyomin Sohn; Seong-Ook Jung (IEEE J. Solid State Circuits, 2022)

SRAM Write Assist Circuit Using Cell Supply Voltage Self-Collapse With Bitline Charge Sharing for Near-Threshold Operation. - Keonhee Cho; Juhyun Park; Ki-Ryong Kim; Tae Woo Oh; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2022)

An Offset-Canceled Sense Amplifier for DRAMs With Hidden Offset-Cancellation Time and Boosted Internal-Voltage-Difference. - In Jun Jung; Tae-Hyun Kim; Keonhee Cho; Ki-Ryong Kim; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2023)

An Energy-Efficient Design of TSV I/O for HBM With a Data Rate up to 10 Gb/s. - Ji-Young Kim; Taeryeong Kim; Jeonghyeok You; Ki-Ryong Kim; Byoung-Mo Moon; Kyomin Sohn; Seong-Ook Jung (IEEE J. Solid State Circuits, 2023)