A 2.5-V 2.0-Gbyte/s 288-Mb packet-based DRAM with enhanced cell efficiency and noise immunity. - Kyehyun Kyung; Hi-Choon Lee; Ki-Whan Song; Ho-Sung Song; Keewook Jung; Joon-Seo Moon; Byoung-Sul Kim; Sung-Burn Cho; Changhyun Kim; Soo-In Cho (IEEE J. Solid State Circuits, 2001)

Complementary Self-Biased Scheme for the Robust Design of CMOS/SET Hybrid Multi-Valued Logic. - Ki-Whan Song; Sang-Hoon Lee; Dae Hwan Kim; Kyung Rok Kim; Jaewoo Kyung; Gwanghyeon Baek; Chun-An Lee; Jong Duk Lee; Byung-Gook Park (ISMVL, 2003)

A 512-mb DDR3 SDRAM prototype with CIO minimization and self-calibration techniques. - Churoo Park; Hoeju Chung; Yun-Sang Lee; Jaekwan Kim 003; JaeJun Lee; Moo Sung Chae; Dae-Hee Jung; Sung-Ho Choi; Seung-young Seo; Taek-Seon Park; Jun-Ho Shin; Jin-Hyung Cho; et al. (IEEE J. Solid State Circuits, 2006)

A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency. - Ki-Whan Song; Jinyoung Kim; Jae-Man Yoon; Sua Kim; Huijung Kim; Hyun-Woo Chung; Hyungi Kim; Kanguk Kim; Hwan-Wook Park; Hyun Chul Kang; Nam-Kyun Tak; Dukha Park; et al. (IEEE J. Solid State Circuits, 2010)

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW. - Hoeju Chung; Byung-Hoon Jeong; ByungJun Min; Youngdon Choi; Beak-Hyung Cho; Junho Shin; Jinyoung Kim; Jung Sunwoo; Joon-min Park; Qi Wang; Yong-jun Lee; Sooho Cha; et al. (ISSCC, 2011)

The novel SCR-based ESD protection with low triggering and high holding voltages. - Myounggon Kang; Ki-Whan Song; Byung-Gook Park; Hyungcheol Shin (Microelectron. J., 2011)

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology. - Daeyeal Lee; Ik Joon Chang; Sangyong Yoon; Joonsuc Jang; Dong-Su Jang; Wook-Ghee Hahn; Jong-Yeol Park; Doo-Gon Kim; Chiweon Yoon; Bong-Soon Lim; ByungJun Min; Sung-Won Yun; et al. (ISSCC, 2012)

Adaptive Multi-Pulse Program Scheme Based on Tunneling Speed Classification for Next Generation Multi-Bit/Cell NAND FLASH. - Yong-Sung Cho; Il-Han Park; Sangyong Yoon; Nam-Hee Lee; Sang-Hyun Joo; Ki-Whan Song; Kihwan Choi; Jin-Man Han; Kyehyun Kyung; Young-Hyun Jun (IEEE J. Solid State Circuits, 2013)

NAND Flash Memory With Multiple Page Sizes for High-Performance Storage Devices. - Jinyoung Kim; Sang-Hoon Park; Hyeokjun Seo; Ki-Whan Song; Sungroh Yoon; Eui-Young Chung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

A flash memory controller for 15μs ultra-low-latency SSD using high-speed 3D NAND flash with 3μs read time. - Wooseong Cheong; Chanho Yoon; Seonghoon Woo; Kyuwook Han; Daehyun Kim; Chulseung Lee; Youra Choi; Shine Kim; Dongku Kang; Geunyeong Yu; Jaehong Kim 008; Jaechun Park; et al. (ISSCC, 2018)

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. - Seungjae Lee 001; Chulbum Kim; Minsu Kim 004; Sung-Min Joe; Joonsuc Jang; Seungbum Kim; Kangbin Lee; Jisu Kim; Jiyoon Park; Hanjun Lee; Min-Seok Kim; Seonyong Lee; et al. (ISSCC, 2018)

A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. - Dongku Kang; Minsu Kim 004; Suchang Jeon; Wontaeck Jung; Jooyong Park; Gyo Soo Choo; Dong-Kyo Shim; Anil Kavala; Seungbum Kim; Kyung-Min Kang; Jiyoung Lee; Kuihan Ko; et al. (ISSCC, 2019)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)

Machine Learning for Product Engineering in NAND Flash Memory. - Jongmin Kim; Earl Kim; Jeongin Choe; Ki-Whan Song; Eun-Kyoung Kim; Jai Hyuk Song (ICEIC, 2022)

Electric Field Impact on Lateral Charge Diffusivity in Charge Trapping 3D NAND Flash Memory. - Juwon Lee; Junho Seo; Jeonghun Nam; YongLae Kim; Ki-Whan Song; Jai Hyuk Song; Woo Young Choi (IRPS, 2022)

Novel Electrical Detection Method for Random Defects on Peripheral Circuits in NAND Flash Memory. - Bu-Il Nam; Young-Ha Choi; Sungki Hong; Ki-Young Dong; Wontaeck Jung; Sang-Won Park; Soon-Yong Lee; Dooyeun Jung; Byoung-Hee Kim; Eun-Kyoung Kim; Ki-Whan Song; Jai Hyuk Song; et al. (IRPS, 2022)