SrO capping effect for La2O3/Ce-silicate gate dielectrics. - Kuniyuki Kakushima; K. Okamoto; T. Koyanagi; M. Kouda; Kiichi Tachi; Takamasa Kawanago; J. Song; Parhat Ahmet; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; et al. (Microelectron. Reliab., 2010)

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. - Kuniyuki Kakushima; Kiichi Tachi; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2010)

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. - Kiichi Tachi; Sylvain Barraud; Kuniyuki Kakushima; Hiroshi Iwai; Sorin Cristoloveanu; Thomas Ernst 005 (Microelectron. Reliab., 2011)