Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. - Aditi Agarwal; Kijeong Han; B. Jayant Baliga (DRC, 2019)

Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs. - Aditi Agarwal; Kijeong Han; B. Jayant Baliga (ESSDERC, 2019)

Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress. - Ajit Kanale; Kijeong Han; B. Jayant Baliga; Subhashish Bhattacharya (IRPS, 2019)

2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. - Aditi Agarwal; Kijeong Han; B. Jayant Baliga (DRC, 2020)