Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. - Izumi Hirano; Yasushi Nakasaki; Shigeto Fukatsu; Masakazu Goto; Koji Nagatomo; Seiji Inumiya; Katsuyuki Sekine; Yuichiro Mitani; Kikuo Yamabe (Microelectron. Reliab., 2013)

Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor. - Soshi Sato; Kikuo Yamabe; Tetsuo Endoh; Masaaki Niwa (Microelectron. Reliab., 2016)

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. - Yusuke Higashi; Riichiro Takaishi; Koichi Kato; Masamichi Suzuki; Yasushi Nakasaki; Mitsuhiro Tomita; Yuichiro Mitani; Masuaki Matsumoto; Shohei Ogura; Katsuyuki Fukutani; Kikuo Yamabe (Microelectron. Reliab., 2017)

Verification of Copper Stress Migration Under Low Temperature Long Time Stress. - Hideya Matsuyama; Takashi Suzuki; Motoki Shiozu; Hideo Ehara; Takeshi Soeda; Hirokazu Hosoi; Masao Oshima; Kikuo Yamabe (IRPS, 2019)