MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI. - Shinichi Takagi; Kimihiko Kato; Wu-Kang Kim; Kwangwon Jo; Ryo Matsumura; Ryotaro Takaguchi; Dae-Hwan Ahn; Takahiro Gotow; Mitsuru Takenaka (ESSDERC, 2018)

Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers. - Kei Sumita; Jun Takeyasu; Kimihiko Kato; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi (3DIC, 2019)

Advanced MOS Device Technology for Low Power Logic LSI. - Shinichi Takagi; Kimihiko Kato; Kei Sumita; Kwangwon Jo; Cheol-Min Lim; Ryotaro Takaguchi; Dae-Hwan Ahn; Jun Takeyasu; Kasidit Toprasertpong; Mitsuru Takenaka (MIXDES, 2019)

Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers. - Shota Iizuka; Kimihiko Kato; Atsushi Yagishita; Hidehiro Asai; Tetsuya Ueda; Hiroshi Oka; Junichi Hattori; Tsutomu Ikegami; Koichi Fukuda; Takahiro Mori (VLSI Circuits, 2021)

Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation. - Hiroshi Oka; Takumi Inaba; Shota Iizuka; Hidehiro Asai; Kimihiko Kato; Takahiro Mori (VLSI Technology and Circuits, 2022)

Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs. - Takumi Inaba; Hiroshi Oka; Hidehiro Asai; Hiroshi Fuketa; Shota Iizuka; Kimihiko Kato; Shunsuke Shitakata; Koichi Fukuda; Takahiro Mori (VLSI Technology and Circuits, 2023)

Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality. - Hiroshi Oka; Takumi Inaba; Shunsuke Shitakata; Kimihiko Kato; Shota Iizuka; Hidehiro Asai; Hiroshi Fuketa; Takahiro Mori (IEEE Access, 2023)

Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. - Shimpei Nishiyama; Kimihiko Kato; Yongxun Liu; Raisei Mizokuchi; Jun Yoneda; Tetsuo Kodera; Takahiro Mori (IEICE Trans. Electron., 2023)

Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation. - Shunsuke Shitakata; Hiroshi Oka; Kimihiko Kato; Takumi Inaba; Shota Iizuka; Hidehiro Asai; Takahiro Mori (DRC, 2024)

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs. - Takumi Inaba; Hiroshi Oka; Hidehiro Asai; Hiroshi Fuketa; Shota Iizuka; Kimihiko Kato; Shunsuke Shitakata; Koichi Fukuda; Takahiro Mori (IEEE Access, 2024)