Investigation of IGBT turn-on failure under high applied voltage operation. - Masayasu Ishiko; Koji Hotta; Sachiko Kawaji; Takahide Sugiyama; Tomoyuki Shouji; Takeshi Fukami; Kimimori Hamada (Microelectron. Reliab., 2004)

Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell. - Giovanni Breglio; Andrea Irace; Ettore Napoli; Paolo Spirito; Kimimori Hamada; T. Nishijima; T. Ueta (Microelectron. Reliab., 2007)

Detection of localized UIS failure on IGBTs with the aid of lock-in thermography. - Giovanni Breglio; Andrea Irace; Ettore Napoli; Michele Riccio; Paolo Spirito; Kimimori Hamada; T. Nishijima; T. Ueta (Microelectron. Reliab., 2008)

Analysis of neutron-induced single-event burnout in SiC power MOSFETs. - Tomoyuki Shoji; Shuichi Nishida; Kimimori Hamada; Hiroshi Tadano (Microelectron. Reliab., 2015)