Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. - M. K. Radhakrishnan; Kin Leong Pey; C. H. Tung; W. H. Lin (Microelectron. Reliab., 2002)

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. - Kin Leong Pey; C. H. Tung; M. K. Radhakrishnan; L. J. Tang; Y. Sun; X. D. Wang; W. H. Lin (Microelectron. Reliab., 2003)

Structure of the oxide damage under progressive breakdown. - Felix Palumbo; G. Condorelli; Salvatore Lombardo; Kin Leong Pey; C. H. Tung; L. J. Tang (Microelectron. Reliab., 2005)

Robust Electromigration reliability through engineering optimization. - Wee Loon Ng; Kheng Chok Tee; Junfeng Liu; Yong Chiang Ee; Oliver Aubel; Chuan Seng Tan; Kin Leong Pey (Microelectron. Reliab., 2014)

Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices. - Nagarajan Raghavan; Michel Bosman; Daniel D. Frey; Kin Leong Pey (Microelectron. Reliab., 2014)

Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective. - Nagarajan Raghavan; Michel Bosman; Kin Leong Pey (Microelectron. Reliab., 2014)

Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory. - Nagarajan Raghavan; Daniel D. Frey; Kin Leong Pey (Microelectron. Reliab., 2014)

High-κ dielectric breakdown in nanoscale logic devices - Scientific insight and technology impact. - Nagarajan Raghavan; Kin Leong Pey; Kalya Shubhakar (Microelectron. Reliab., 2014)

Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer. - Kalya Shubhakar; Nagarajan Raghavan; Sunil Singh Kushvaha; Michel Bosman; Zhongrui Wang; Sean J. O'Shea; Kin Leong Pey (Microelectron. Reliab., 2014)

Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer. - Nagarajan Raghavan; Michel Bosman; Kin Leong Pey (IRPS, 2015)

Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM. - Nagarajan Raghavan; Daniel D. Frey; Michel Bosman; Kin Leong Pey (IRPS, 2015)

Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory. - Nagarajan Raghavan; Michel Bosman; Kin Leong Pey (Microelectron. Reliab., 2015)

Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach. - Nagarajan Raghavan; Daniel D. Frey; Michel Bosman; Kin Leong Pey (Microelectron. Reliab., 2015)

An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis. - Kalya Shubhakar; Michel Bosman; O. A. Neucheva; Y. C. Loke; Nagarajan Raghavan; R. Thamankar; Alok Ranjan 001; Sean J. O'Shea; Kin Leong Pey (Microelectron. Reliab., 2015)

Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack. - Xuan Feng; Shurong Dong; Hei Wong; Danqun Yu; Kin Leong Pey; Kalya Shubhakar; W. S. Lau (Microelectron. Reliab., 2016)

Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices. - Sen Mei; Michel Bosman; Nagarajan Raghavan; Xing Wu 005; Kin Leong Pey (Microelectron. Reliab., 2016)

Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM. - Alok Ranjan 001; Nagarajan Raghavan; Joel Molina Reyes; Sean J. O'Shea; Kalya Shubhakar; Kin Leong Pey (Microelectron. Reliab., 2016)

Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight. - Kalya Shubhakar; Sen Mei; Michel Bosman; Nagarajan Raghavan; Alok Ranjan 001; Sean J. O'Shea; Kin Leong Pey (Microelectron. Reliab., 2016)

The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode. - Danqun Yu; W. S. Lau; Hei Wong; Xuan Feng; Shurong Dong; Kin Leong Pey (Microelectron. Reliab., 2016)

Preliminary study of integrated physics and mathematics bridging course. - U-Xuan Tan; Yajuan Zhu; Chee Huei Lee; Tin-Lam Toh; Guan Kheng Sze; Shirley Tay; Darren Wong; Kin Leong Pey (EDUCON, 2017)

Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction. - Jia Hao Lim; Nagarajan Raghavan; Sen Mei; Vinayak Bharat Naik; Jae Hyun Kwon; S. M. Noh; B. Liu; E. H. Toh; Nyuk Leong Chung; Robin Chao; K. H. Lee; Kin Leong Pey (IRPS, 2018)

Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics. - Alok Ranjan 001; Nagarajan Raghavan; Sean J. O'Shea; Sen Mei; Michel Bosman; Kalya Shubhakar; Kin Leong Pey (IRPS, 2018)

Effectiveness of Physical Robot Versus Robot Simulator in Teaching Introductory Programming. - Oka Kurniawan; Norman Tiong Seng Lee; Subhajit Datta; Nachamma Sockalingam; Kin Leong Pey (TALE, 2018)

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress. - Xuan Feng; Nagarajan Raghavan; Sen Mei; Shurong Dong; Kin Leong Pey; Hei Wong (Microelectron. Reliab., 2018)

Understanding spatial resolution of laser voltage imaging. - Venkat Krishnan Ravikumar; Gabriel Lim; Jiann Min Chin; Kin Leong Pey; Joel K. W. Yang (Microelectron. Reliab., 2018)

Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. - Fernando Leonel Aguirre; Andrea Padovani; Alok Ranjan 001; Nagarajan Raghavan; Nahuel Vega; Nahuel Muller; Sebastián Matías Pazos; Mario Debray; Joel Molina Reyes; Kin Leong Pey; Felix Palumbo (IRPS, 2019)

Correct Extrapolation Model for TDDB of STT-MRAM MgO Magnetic Tunnel Junctions. - Jia Hao Lim; Nagarajan Raghavan; Vinayak Bharat Naik; Jae Hyun Kwon; Kazutaka Yamane; H. Yang; K. H. Lee; Kin Leong Pey (IRPS, 2019)

Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns. - Kin Leong Pey; Alok Ranjan 001; Nagarajan Raghavan; Kalya Shubhakar; Sean J. O'Shea (IRPS, 2019)

A transformative engineering and architecture education. - Kin Leong Pey; Lucienne Blessing; Bige Tunçer (FIE, 2020)

Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. - Alok Ranjan 001; Sean J. O'Shea; Michel Bosman; J. Molina; Nagarajan Raghavan; Kin Leong Pey (IRPS, 2020)

Origins and Signatures of Tail Bit Failures in Ultrathin MgO Based STT-MRAM. - Jia Hao Lim; Nagarajan Raghavan; Jae Hyun Kwon; Tae Young Lee; Robin Chao; Nyuk Leong Chung; Kazutaka Yamane; Naganivetha Thiyagarajah; Vinayak Bharat Naik; Kin Leong Pey (IRPS, 2020)

Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device. - Laiqiang Luo; Kalya Shubhakar; Sen Mei; Nagarajan Raghavan; Fan Zhang; Danny Shum; Kin Leong Pey (IRPS, 2020)

Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic Computation. - J. Tan; J. H. Lim; Jae Hyun Kwon; Vinayak Bharat Naik; Nagarajan Raghavan; Kin Leong Pey (IRPS, 2023)

A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices. - Tiang Teck Tan; Yu-Yun Wang; Joel Tan; Tian-Li Wu; Nagarajan Raghavan; Kin Leong Pey (IRPS, 2023)