Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models. - Kin P. Cheung (Microelectron. Reliab., 2001)

Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide. - Kin P. Cheung (Microelectron. Reliab., 2001)

Circuit-aware device reliability criteria methodology. - Jason T. Ryan; Lan Wei; Jason P. Campbell; Ricki G. Southwick; Kin P. Cheung; Anthony S. Oates; H.-S. Philip Wong; John Suehle (ESSCIRC, 2011)

Non-tunneling origin of the 1/f noise in SiC MOSFET. - Kin P. Cheung; Jason P. Campbell (ICICDT, 2018)

SiC power MOSFET gate oxide breakdown reliability - Current status. - Kin P. Cheung (IRPS, 2018)

Switching Variability Factors in Compliance-Free Metal Oxide RRAM. - Dmitry Veksler; Gennadi Bersuker; Adam W. Bushmaker; P. R. Shrestha; Kin P. Cheung; Jason P. Campbell (IRPS, 2019)

Anomalous accelerated negative-bias- instability (NBI) at low drain bias. - Kin P. Cheung (IRPS, 2020)

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. - Dmitry Veksler; Gennadi Bersuker; Adam W. Bushmaker; Maribeth Mason; P. R. Shrestha; Kin P. Cheung; Jason P. Campbell; Thomas Rueckes; Lee Cleveland; Harry Luan; David C. Gilmer (IRPS, 2020)

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide. - Xiao Lyu; Pragya R. Shrestha; Mengwei Si; Panni Wang; Junkang Li; Kin P. Cheung; Shimeng Yu; Peide D. Ye (VLSI Technology and Circuits, 2022)

V-Ramp test and gate oxide screening under the "lucky" defect model. - Kin P. Cheung (IRPS, 2023)