A new CR-delay circuit technology for high-density and high-speed DRAMs. - Yohji Watanabe; Takashi Ohsawa; Kiyofumi Sakurai; Tohru Furuyama (IEEE J. Solid State Circuits, 1989)

Decoded-source sense amplifier for high-density DRAMs. - Jun-ichi Okamura; Yoshio Okada; Masaru Koyanagi; Yoshiaki Takeuchi; Masahiro Yamada; Kiyofumi Sakurai; Sadao Imada; Suzuo Saito (IEEE J. Solid State Circuits, 1990)

A 500-megabyte/s data-rate 4.5 M DRAM. - Natsuki Kushiyama; Shigeo Ohshima; Don Stark 001; Hiroyuki Noji; Kiyofumi Sakurai; Satoru Takase; Torhu Furuyama; Richard M. Barth; Andy Chan; John Dillon; James A. Gasbarro; Matthew M. Griffin; et al. (IEEE J. Solid State Circuits, 1993)

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput. - Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; et al. (ISSCC, 2006)

A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology. - Takahiko Hara; Koichi Fukuda; Kazuhisa Kanazawa; Noboru Shibata; Koji Hosono; Hiroshi Maejima; Michio Nakagawa; Takumi Abe; Masatsugu Kojima; Masaki Fujiu; Yoshiaki Takeuchi; Kazumi Amemiya; et al. (IEEE J. Solid State Circuits, 2006)

A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. - Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; et al. (IEEE J. Solid State Circuits, 2007)

A 113mm2 32Gb 3b/cell NAND flash memory. - Takuya Futatsuyama; Norihiro Fujita; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Teruhiko Kamei; Hiroaki Nasu; Makoto Iwai; Koji Kato; Yasuyuki Fukuda; Naoaki Kanagawa; Naofumi Abiko; et al. (ISSCC, 2009)

A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology. - Koichi Fukuda; Yoshihisa Watanabe; Eiichi Makino; Koichi Kawakami; Jumpei Sato; Teruo Takagiwa; Naoaki Kanagawa; Hitoshi Shiga; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Takeshi Ogawa; et al. (ISSCC, 2011)

A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology. - Koichi Fukuda; Yoshihisa Watanabe; Eiichi Makino; Koichi Kawakami; Jumpei Sato; Teruo Takagiwa; Naoaki Kanagawa; Hitoshi Shiga; Naoya Tokiwa; Yoshihiko Shindo; Takeshi Ogawa; Toshiaki Edahiro; et al. (IEEE J. Solid State Circuits, 2012)