Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM. - Hiraki Inoue; Takeya Hirose; Toshiki Mizuguchi; Yusuke Komura; Toshihiko Saito; Minato Ito; Kiyotaka Kimura; Tatsuya Onuki; Yoshinori Ando; Hiromi Sawai; Tsutomu Murakawa; Hitoshi Kunitake; et al. (IMW, 2024)