Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. - Chunmeng Dou; Dennis Lin; Abhitosh Vais; Tsvetan Ivanov; Han-Ping Chen; Koen Martens; Kuniyuki Kakushima; Hiroshi Iwai; Yuan Taur; Aaron Thean; Guido Groeseneken (Microelectron. Reliab., 2014)

Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. - Simon Van Beek; Koen Martens; Philippe Roussel; Gabriele Luca Donadio; Johan Swerts; Sofie Mertens; Gouri Sankar Kar; Tai Min; Guido Groeseneken (IRPS, 2015)

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. - Abhitosh Vais; Koen Martens; Jacopo Franco; Dennis Lin; AliReza Alian; Philippe Roussel; S. Sioncke; Nadine Collaert; Aaron Thean; Marc M. Heyns; Guido Groeseneken; Kristin De Meyer (IRPS, 2015)