RF CMOS inductor shielded by a high-impedance surface. - Eiichi Sano; Koji Inafune; Masamichi Akazawa (IEICE Electron. Express, 2004)

W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs. - Koji Inafune; Eiichi Sano; Hideaki Matsuzaki; Toshihiko Kosugi; Takatomo Enoki (IEICE Trans. Electron., 2006)