Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. - Izumi Hirano; Yasushi Nakasaki; Shigeto Fukatsu; Masakazu Goto; Koji Nagatomo; Seiji Inumiya; Katsuyuki Sekine; Yuichiro Mitani; Kikuo Yamabe (Microelectron. Reliab., 2013)