Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. - Claire Fenouillet-Béranger; P. Perreau; S. Denorme; L. Tosti; François Andrieu; Olivier Weber; S. Barnola; C. Arvet; Y. Campidelli; Sébastien Haendler; R. Beneyton; C. Perrot; et al. (ESSCIRC, 2009)

32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit. - Olivier Thomas; Jean-Philippe Noel; Claire Fenouillet-Béranger; Marie-Anne Jaud; J. Dura; P. Perreau; Frédéric Boeuf; François Andrieu; D. Delprat; F. Boedt; Konstantin Bourdelle; Bich-Yen Nguyen; et al. (ISCAS, 2010)

Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions. - Lars Knoll; Qing-Tai Zhao; Stefan Trellenkamp; Anna Schäfer; K. K. Bourdelle; Siegfried Mantl (ESSDERC, 2012)

Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs. - Simon Richter; Svetlana A. Vitusevich; Sergii Pud; Jing Li; Lars Knoll; Stefan Trellenkamp; Anna Schäfer; Steffi Lenk; Qing-Tai Zhao; Andreas Offenhäusser; Siegfried Mantl; Konstantin K. Bourdelle (ESSDERC, 2013)

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. - Guillaume Besnard; Xavier Garros; François Andrieu; Phuong Nguyen; William van den Daele; Patrick Reynaud; Walter Schwarzenbach; Daniel Delprat; Konstantin Bourdelle; Gilles Reimbold; Sorin Cristoloveanu (ESSDERC, 2014)

Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform. - Shankar Kumar Selvaraja; Peter De Heyn; Gustaf Winroth; Patrick Ong; Guy Lepage; Celine Cailler; Arnaud Rigny; Konstantin K. Bourdelle; Wim Bogaerts; Dries Van Thourhout; Joris Van Campenhout; Philippe Absil (OFC, 2014)