Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. - Tarek Ali; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Ricardo Olivo; David Lehninger; Konstantin Mertens; Franz Müller 001; Maximilian Lederer; Raik Hoffmann; Clemens Mart; et al. (IRPS, 2020)

Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. - David Lehninger; Hannes Mähne; Tarek Ali; Raik Hoffmann; Ricardo Olivo; Maximilian Lederer; Konstantin Mertens; Thomas Kämpfe; Kati Biedermann; Matthias Landwehr; Andreas Heinig; Defu Wang; et al. (IMW, 2022)

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. - Yannick Raffel; Ricardo Olivo; Maximilian Lederer; Franz Müller 001; Raik Hoffmann; Tarek Ali; Konstantin Mertens; Luca Pirro; Maximilian Drescher; Sven Beyer; Thomas Kämpfe; Konrad Seidel; et al. (IMW, 2022)

Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. - Konrad Seidel; David Lehninger; Raik Hoffmann; Tarek Ali; Maximilian Lederer; Ricardo Revello; Konstantin Mertens; Kati Biedermann; Yukai Shen; Defu Wang; Matthias Landwehr; Andreas Heinig; et al. (VLSI Technology and Circuits, 2022)