Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration. - Takashi Inukai; Makoto Takamiya; Kouichi Nose; Hiroshi Kawaguchi 001; Toshiro Hiramoto; Takayasu Sakurai (CICC, 2000)

Design impact of positive temperature dependence on drain current in sub-1-V CMOS VLSIs. - Kouichi Kanda; Kouichi Nose; Hiroshi Kawaguchi 001; Takayasu Sakurai (IEEE J. Solid State Circuits, 2001)