A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology. - Yasuhiro Nakasha; Toshihide Suzuki; Hideki Kano; Kouji Tsukashima; Akio Ohya; Ken Sawada; Kozo Makiyama; Tsuyoshi Takahashi; Masahiro Nishi; Tatsuya Hirose; Masahiko Takikawa; Yuu Watanabe (IEEE J. Solid State Circuits, 2002)

A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique. - Yusuke Inoue 003; Masaru Sato 001; Toshihiro Ohki; Kozo Makiyama; Tsuyoshi Takahashi; Hisao Shigematsu; Tatsuya Hirose (IEEE J. Solid State Circuits, 2005)

A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology. - Toshihide Suzuki; Yoichi Kawano; Yasuhiro Nakasha; Shinji Yamaura; Tsuyoshi Takahashi; Kozo Makiyama; Tatsuya Hirose (IEEE J. Solid State Circuits, 2007)

Millimeter-Wave GaN HEMT for Power Amplifier Applications. - Kazukiyo Joshin; Kozo Makiyama; Shiro Ozaki; Toshihiro Ohki; Naoya Okamoto; Yoshitaka Niida; Masaru Sato 001; Satoshi Masuda; Keiji Watanabe (IEICE Trans. Electron., 2014)

300-GHz Amplifier in 75-nm InP HEMT Technology. - Hiroshi Matsumura; Yoichi Kawano; Shoichi Shiba; Masaru Sato 001; Toshihide Suzuki; Yasuhiro Nakasha; Tsuyoshi Takahashi; Kozo Makiyama; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2016)

Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates. - Yusuke Kumazaki; Keiji Watanabe; Toshihiro Ohki; Junji Kotani; Shiro Ozaki; Yoshitaka Niida; Kozo Makiyama; Yuichi Minoura; Naoya Okamoto; Norikazu Nakamura (BCICTS, 2019)

Innovative RF Device Technologies for Advanced Information and Communications Network Society. - Kozo Makiyama; Shigeki Yoshida; Ken Nakata; Yasuyuki Miyamoto (BCICTS, 2022)

Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network. - Shigeki Yoshida; Kozo Makiyama; Akihiro Hayasaka; Isao Makabe; Ken Nakata (BCICTS, 2022)