A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. - Jonathan Chang; Yen-Huei Chen; Hank Cheng; Wei-Min Chan; Hung-Jen Liao; Quincy Li; Stanley Chang; Sreedhar Natarajan; Robin Lee; Ping-Wei Wang; Shyue-Shyh Lin; Chung-Cheng Wu; et al. (ISSCC, 2013)