In-Memory Approximate Computing Architecture Based on 3D-NAND Flash Memories. - Po-Hao Tseng; Yu-Hsuan Lin; Feng-Ming Lee; Tian-Cig Bo; Yung-Chun Li; Ming-Hsiu Lee; Kuang-Yeu Hsieh; Keh-Chung Wang; Chih-Yuan Lu (VLSI Technology and Circuits, 2022)

SLC and MLC In-Memory-Approximate-Search Solutions in Commercial 48-layer and 96-layer 3D-NAND Flash Memories. - Po-Hao Tseng; Tian-Cig Bo; Yu-Hsuan Lin; Yu-Chao Lin; Jhe-Yi Liao; Feng-Ming Lee; Yu-Yu Lin; Ming-Hsiu Lee; Kuang-Yeu Hsieh; Keh-Chung Wang; Chih-Yuan Lu (IMW, 2023)

3D-NAND based Filtering Cube with High Resolution 2D Query and Tunable Feature Length for Computational SSD. - Po-Hao Tseng; Shao-Yu Fang; Yu-Hsuan Lin; Feng-Ming Lee; Jhe-Yi Liao; Yu-Yu Lin; Ming-Hsiu Lee; Kuang-Yeu Hsieh; Keh-Chung Wang; Chih-Yuan Lu (IMW, 2024)

Reliability Assessment for an In-3D-NAND Approximate Searching Solution. - Po-Hao Tseng; Yu-Hsuan Lin; Feng-Min Lee; Tian-Cig Bo; Ming-Hsiu Lee; Kuang-Yeu Hsieh; Keh-Chung Wang; Chih-Yuan Lu (IRPS, 2024)

Bit-Cost-Scalable 3D DRAM Architecture and Unit Cell First Demonstrated with Integrated Gate-Around and Channel-Around IGZO FETs. - Feng-Min Lee; Po-Hao Tseng; Yu-Yu Lin; Yu-Hsuan Lin; Wei-Lun Weng; Nei-Chih Lin; Po-Jung Sung; Chien-Ting Wu; Chih-Chao Yang; Wen-Fa Wu; Chang-Hong Shen; Tuo-Hung Hou; et al. (VLSI Technology and Circuits, 2024)

Utilizing 2T SONOS Cell Characteristics for L2/Euclidean Distance Computing - From Unit Cell to Array Operations. - Yu-Hsuan Lin; Po-Hao Tseng; Ming-Hsiu Lee; Yu-Yu Lin; Feng-Min Lee; Dai-Ying Lee; Pei-Ying Du; Chih-Chieh Lin; Teng-Hao Yeh; Kuang-Yeu Hsieh; Keh-Chung Wang; Chih-Yuan Lu (IMW, 2025)