A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels. - Peijian Zhang; Xue Wu; Qianning Yi; Wensuo Chen; Yonghui Yang; Kunfeng Zhu; Kaizhou Tan; Yi Zhong (Microelectron. Reliab., 2017)

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation. - Xiaolong Li; Xin Wang 141; Mohan Liu; Kunfeng Zhu; Guohua Shui; Qiwen Zheng; Jiangwei Cui; Wu Lu; Yudong Li; Qi Guo 007 (IEEE Access, 2024)

Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance. - Jiaweiwen Huang; Wensuo Chen; Shenglei Zhao; Qisheng Yu; Aohang Zhang; Kunfeng Zhu; Jian Li (Microelectron. J., 2024)

Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position. - Yuying Wang; Zhengyuan Zhang; Peng Jian; Pengfei Liao; Aohang Zhang; Kunfeng Zhu; Wensuo Chen (Microelectron. J., 2024)

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier. - Peijian Zhang; Kunfeng Zhu; Wensuo Chen (IEICE Trans. Electron., 2024)