Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology. - Shin-ichi O'Uchi; Meishoku Masahara; Kunihiro Sakamoto; Kazuhiko Endo; Yongxun Liu; Takashi Matsukawa; Toshihiro Sekigawa; Hanpei Koike; Eiichi Suzuki (CICC, 2007)

FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction. - Shin-ichi O'Uchi; Meishoku Masahara; Kazuhiko Endo; Yongxun Liu; Takashi Matsukawa; Kunihiro Sakamoto; Toshihiro Sekigawa; Hanpei Koike; Eiichi Suzuki (IEICE Trans. Electron., 2008)

Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET. - Shin-ichi O'Uchi; Kazuhiko Endo; Yongxun Liu; Tadashi Nakagawa; Takashi Matsukawa; Yuki Ishikawa; Junichi Tsukada; Toshihiro Sekigawa; Hanpei Koike; Kunihiro Sakamoto; Meishoku Masahara (CICC, 2010)

0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits. - Shin-ichi O'Uchi; Kazuhiko Endo; Yongxun Liu; Tadashi Nakagawa; Takashi Matsukawa; Yuki Ishikawa; Junichi Tsukada; Hiromi Yamauchi; Toshihiro Sekigawa; Hanpei Koike; Kunihiro Sakamoto; Meishoku Masahara (ESSCIRC, 2010)

A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology. - Shin-ichi O'Uchi; Kazuhiko Endo; Takashi Matsukawa; Yongxun Liu; Tadashi Nakagawa; Yuki Ishikawa; Junichi Tsukada; Hiromi Yamauchi; Toshihiro Sekigawa; Hanpei Koike; Kunihiro Sakamoto; Meishoku Masahara (IEICE Trans. Electron., 2012)

High-Frequency Precise Characterization of Intrinsic FinFET Channel. - Hideo Sakai; Shin-ichi O'Uchi; Takashi Matsukawa; Kazuhiko Endo; Yongxun Liu; Junichi Tsukada; Yuki Ishikawa; Tadashi Nakagawa; Toshihiro Sekigawa; Hanpei Koike; Kunihiro Sakamoto; Meishoku Masahara; et al. (IEICE Trans. Electron., 2012)

SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System. - Yasushi Igarashi; Tadashi Chiba; Shin-ichi O'Uchi; Meishoku Masahara; Kunihiro Sakamoto (IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2014)