Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell. - Kuo-Fu Lee; Yiming Li 005; Tien-Yeh Li; Zhong-Cheng Su; Chin-Hong Hwang (Microelectron. Reliab., 2010)

Accurate 3-D capacitance extractions for advanced nanometer CMOS nodes. - Keh-Jeng Chang; Shih-Hao Lee; Kuo-Fu Lee; Ping-Hung Yuh; Ho-Che Yu; Wen-Cheng Huang; Victor C. Y. Chang (VLSI-DAT, 2015)