13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. - Yen-Huei Chen; Wei-Min Chan; Wei-Cheng Wu; Hung-Jen Liao; Kuo-Hua Pan; Jhon-Jhy Liaw; Tang-Hsuan Chung; Quincy Li; George H. Chang; Chih-Yung Lin; Mu-Chi Chiang; Shien-Yang Wu; et al. (ISSCC, 2014)

A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications. - Yen-Huei Chen; Wei-Min Chan; Wei-Cheng Wu; Hung-Jen Liao; Kuo-Hua Pan; Jhon-Jhy Liaw; Tang-Hsuan Chung; Quincy Li; Chih-Yung Lin; Mu-Chi Chiang; Shien-Yang Wu; Jonathan Chang (IEEE J. Solid State Circuits, 2015)