On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations. - Kun-Wei Lin; Kuo-Hui Yu; Wen-Lung Chang; Chih-Kai Wang; Wen-Huei Chiou; Wen-Chau Liu (Microelectron. Reliab., 2001)

A low damage GaN-based light-emitting diode with textured/inclined sidewalls and an air-buffer layer. - Yi-Jung Liu; Tsung-Yuan Tsai; Kuo-Hui Yu; Der-Feng Guo; Li-Yang Chen; Tsung-Han Tsai; Wen-Chau Liu (Displays, 2010)