Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array. - H.-L. Chiang; J.-F. Wang; K.-H. Lin; C.-H. Nien; J.-J. Wu; Kuo-Yu Hsiang; C.-P. Chuu; Y.-W. Chen; X. W. Zhang; C. W. Liu; Tahui Wang; C. C. Wang; et al. (VLSI Technology and Circuits, 2022)

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf1-xZrXO2 for Quantum Computing Applications. - Kuo-Yu Hsiang; Jia-Yang Lee; Z.-F. Lou; F.-S. Chang; Z.-X. Li; C. W. Liu; T.-H. Hou; P. Su; Min-Hung Lee (IRPS, 2023)

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. - Kuo-Yu Hsiang; J.-Y. Lee; F.-S. Chang; Z.-F. Lou; Z.-X. Li; Z.-H. Li; J.-H. Chen; C. W. Liu; T.-H. Hou; Min-Hung Lee (VLSI Technology and Circuits, 2023)

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. - J.-Y. Lee; F.-S. Chang; Kuo-Yu Hsiang; P.-H. Chen; Z.-F. Luo; Z.-X. Li; J.-H. Tsai; C. W. Liu; Min-Hung Lee (VLSI Technology and Circuits, 2023)