Comparative Study of Channel Materials for Ferroelectric NAND Applications. - Lance Fernandes; Prasanna Venkatesan Ravindran; Mengkun Tian; Yu-Hsin Kuo; Nashrah Afroze; Salma Soliman; Sanghyun Kang; Dyutimoy Chakraborty; Taeyoung Song; Chengyang Zhang; Kijoon Kim; Kwangyou Seo; et al. (IMW, 2025)

Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection. - Sizhe Ma; Saikat Chakraborty; Yixin Qin; Zijian Zhao 001; Jiahui Duan; Moonyoung Jung; Kijoon Kim; Suhwan Lim; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; et al. (IRPS, 2025)

Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage. - Yixin Qin; Saikat Chakraborty; Zijian Zhao 001; Sizhe Ma; Moonyoung Jung; Kijoon Kim; Suhwan Lim; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Vijaykrishnan Narayanan; et al. (IRPS, 2025)

An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage. - Zijian Zhao 001; Varun Darshana Parekh; Po-Kai Hsu; Yixin Qin; Yiming Song; A. N. M. Nafiul Islam; Ningyuan Cao; Siddharth Joshi 001; Thomas Kämpfe; Moonyoung Jung; Kwangyou Seo; Kwangsoo Kim; et al. (CoRR, 2025)