Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs. - Kyle J. Liddy; Nolan S. Hendricks; Andrew J. Green; Andreas Popp; Miles T. Lindquist; Kevin D. Leedy; Stephen E. Tetlak; Neil A. Moser; Günter Wagner; Kelson D. Chabak; Gregg H. Jessen (DRC, 2019)

Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing. - A. E. Islam; Kevin D. Leedy; Neil A. Moser; S. Ganguli; Kyle J. Liddy; Andrew J. Green; Kelson D. Chabak (DRC, 2021)

Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates. - Ahmad Islam; Adam Miesle; M. Dietz; Kevin D. Leedy; S. Ganguli; G. Subramanyam; Weisong Wang; Nicholas Sepelak; Daniel Dryden; Stephen E. Tetlak; Kyle J. Liddy; Andrew J. Green; et al. (DRC, 2022)

The $R_{ text{ON}}-V_{ text{BK}}$ Relationship in $ beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. - S. Ahmed; A. E. Islam; Daniel Dryden; Kyle J. Liddy; Nolan S. Hendricks; Neil A. Moser; Kelson D. Chabak; Andrew J. Green (DRC, 2023)

High breakdown electric field in $ text{Ba}_{ mathrm{x}} text{Sr}_{1- mathrm{x}} text{TiO}_{3}/ text{SiO}_{2}$ dielectric stack formed on (010) $ beta$-Ga2O3 substrates. - Adam Miesle; A. E. Islam; E. Shin; G. Subramanyam; Kevin D. Leedy; S. Ganguli; Daniel Dryden; Kyle J. Liddy; Kelson D. Chabak; Andrew J. Green (DRC, 2023)

Ni/TiO2/ $ beta$-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage. - Jeremiah Williams; Nolan S. Hendricks; Weisong Wang; Aaron Adams; Joshua Piel; Daniel Dryden; Kyle J. Liddy; Nicholas Sepelak; Bradley Morell; Adam Miesle; Ahmad Islam; Andrew J. Green (DRC, 2023)